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Stabilization of Thin Films Against Stress Relaxation

IP.com Disclosure Number: IPCOM000078084D
Original Publication Date: 1972-Nov-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

d'Heurle, FM: AUTHOR [+2]

Abstract

Stress relaxation in thin films during storage, operation, fabrication or annealing can change the film characteristics. The properties of individual films or a structure consisting partly or wholly of thin films can be detrimentally affected. A way is described to stop, or at least minimize, this stress relaxation in thin films based on work with Pb films.

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Stabilization of Thin Films Against Stress Relaxation

Stress relaxation in thin films during storage, operation, fabrication or annealing can change the film characteristics. The properties of individual films or a structure consisting partly or wholly of thin films can be detrimentally affected. A way is described to stop, or at least minimize, this stress relaxation in thin films based on work with Pb films.

It has been found that Pb deposited on mica is epitaxial with the positioning, such that individual grains are separated by noncoherent twin boundaries. These films do not produce whiskers. The method is also useful for minimizing hillock or whisker growth in other films, such as Al, Au and Sn.

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