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Measurement of Dislocation Morphology in Graded Gallium Arsenide Phosphide Semiconductor Heterojunction Systems

IP.com Disclosure Number: IPCOM000078166D
Original Publication Date: 1972-Nov-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Dessauer, RG: AUTHOR [+3]

Abstract

Measurement of the extent of dislocations, misfit and inclined, in the graded area portion of gallium arsenide phosphide substrates and other III-V compounds and mixtures thereof, is believed to be an indication of the character and efficiency of light emission from a light-emitting diode formed therein.

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Measurement of Dislocation Morphology in Graded Gallium Arsenide Phosphide Semiconductor Heterojunction Systems

Measurement of the extent of dislocations, misfit and inclined, in the graded area portion of gallium arsenide phosphide substrates and other III-V compounds and mixtures thereof, is believed to be an indication of the character and efficiency of light emission from a light-emitting diode formed therein.

The method comprises cutting a (100) orientation wafer, which is solvent cleaned and washed in a bromine-methanol solution (2% bromine - 98% methanol) followed by a water rinse. Sample is etched with an oxidizing etchant (e.g. 20 ml H(2)O, 80 milligrams AgNO(3), 10 grams CrO(3) and 10 ml HF) followed by a water wash and alcohol drying rinse, whereupon the sample is subjected to visual examination through a scanning electron microscope. The extent of dislocations and crystal imperfections are readily observable and a count make. The count may be related to established standards for efficiency measurements or process control.

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