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Localization and Visualization of Emitter Collector Pipes in Bipolar Transistors

IP.com Disclosure Number: IPCOM000078195D
Original Publication Date: 1972-Nov-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bohg, A: AUTHOR [+2]

Abstract

All emitter-collector pipes in an emitter area can be localized to 0.5 Mu precision or better, and visualized. The method permits subsequent investigations of the pipes, e.g. with the transmission electron microscope.

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Localization and Visualization of Emitter Collector Pipes in Bipolar Transistors

All emitter-collector pipes in an emitter area can be localized to 0.5 Mu precision or better, and visualized. The method permits subsequent investigations of the pipes, e.g. with the transmission electron microscope.

After the identification of the piped transistors, the wafer is exposed to planar etching until the emitter-base junction has been completely removed. Then the signal collecting connections are established o the base and the collector of the piped transistor, and the pipes are visualized with a scanning electron microscope in electron beam induced current mode.

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