Browse Prior Art Database

Hard Magnetic Co Layers

IP.com Disclosure Number: IPCOM000078216D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Schneider, J: AUTHOR [+2]

Abstract

Hard-magnetic Co layers are made by vapor-depositing Co, in an oxygen atmosphere of 10/-4/ to 10/-5/ Torr and with a rate of more than 3 Angstroms, on a substrate with a temperature of less than 220 degrees C. A cubically crystallized Co is formed. The most favorable evaporation rate is between 10 and 16 Angstroms, and the most favorable substrate temperature is between 180 degrees C and 220 degrees C, the magnetic layer reaching a coercive field intensity of approximately 350 Oe, a saturation magnetization of approximately 1,200 Gauss, and a remanence of approximately 1,000 Gauss. A subsequent thermal treatment at approximately 200 degrees C in air increases the coercive field intensity still further.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Hard Magnetic Co Layers

Hard-magnetic Co layers are made by vapor-depositing Co, in an oxygen atmosphere of 10/-4/ to 10/-5/ Torr and with a rate of more than 3 Angstroms, on a substrate with a temperature of less than 220 degrees C. A cubically crystallized Co is formed. The most favorable evaporation rate is between 10 and 16 Angstroms, and the most favorable substrate temperature is between 180 degrees C and 220 degrees C, the magnetic layer reaching a coercive field intensity of approximately 350 Oe, a saturation magnetization of approximately 1,200 Gauss, and a remanence of approximately 1,000 Gauss. A subsequent thermal treatment at approximately 200 degrees C in air increases the coercive field intensity still further.

These Co layers show high adhesion on the substrate and they are highly abrasion-proof. A layer thickness of 500 Angstroms is sufficient for the use in data storages. This, and the high-coercitive field intensity permits storage with high density.

1