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Liquid Phase Epitaxy Growth of DH Laser Arrays

IP.com Disclosure Number: IPCOM000078242D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

A two dimensional array of double heterojunction (DH) lasers is provided that is suitable for fabrication by techniques compatible with monolithic planar devices.

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Liquid Phase Epitaxy Growth of DH Laser Arrays

A two dimensional array of double heterojunction (DH) lasers is provided that is suitable for fabrication by techniques compatible with monolithic planar devices.

A GaAs substrate 2 has a plurality of holes cut therethrough into which are epitaxially grown, outward from the boundary and toward the center of the hole, the consecutive layers of Ga Al As (n), GaAs (p), Ga Al As (p), GaAs (p). In this manner, an array of lasers is made wherein light emanates from the surface of the array, suitable for use as a display or as a source useful in beam- addressable storage systems.

Fig. 2 illustrates an apparatus employed to grow the DH laser array of Fig. 1. The four melt stations for growing the successive layers are fixed and are located above a plate, which supports the multiapertured GaAs substrate. The plate is moved so that the GaAs substrate resides under the first melt station. After each growth, the plate moves the GaAs substrate to its adjacent dump tank so that any surplus material inside the holes can be removed prior to traveling to the next melt station. A vacuum pump can be used to help evacuate the residual melt from the substrate holes and its associated dump tank.

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