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High Voltage Negative Resistance Diode

IP.com Disclosure Number: IPCOM000078257D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Potter, MD: AUTHOR [+2]

Abstract

A high-voltage negative resistance diode comprising an N-type semiconductor body having a diffused P-type region therein surround by a shallow N-plus region, may be provided to give unique voltage characteristics. Fig. 1 shows N-type substrate 10 about 100 ohms-centimeter resistivity having diffused in one surface thereof a P-type region 11, having a resistivity of about 5 ohm-centimeter resistivity. A shallow N-type region 12 is then diffused around the periphery of region 11 such that it not only contacts body 10, but also overlaps the region 11 to form a P-N junction 16 therewith. An oxide layer 13 is then provided over the entire surface of body 10, and metallic contacts 14 and 15 are then made through this layer 13 to P region 11 and to substrate 10, respectively.

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High Voltage Negative Resistance Diode

A high-voltage negative resistance diode comprising an N-type semiconductor body having a diffused P-type region therein surround by a shallow N-plus region, may be provided to give unique voltage characteristics. Fig. 1 shows N-type substrate 10 about 100 ohms-centimeter resistivity having diffused in one surface thereof a P-type region 11, having a resistivity of about 5 ohm-centimeter resistivity. A shallow N-type region 12 is then diffused around the periphery of region 11 such that it not only contacts body 10, but also overlaps the region 11 to form a P-N junction 16 therewith. An oxide layer 13 is then provided over the entire surface of body 10, and metallic contacts 14 and 15 are then made through this layer 13 to P region 11 and to substrate 10, respectively.

When a reverse bias, indicated as V-1, in Fig. 2 is applied across the contacts 14 and 15 the junction 16, between the regions 11 and 12, begins to break down prior to the breakdown of junction 17 between the region 11 and substrate 10. Current thus begins flowing from region 11 thru region 12, as shown by curve 20 in Fig. 2. When region 12 is especially long and shallow; i.e., has a relatively high-sheet resistance of approximately 50 ohms per square, and a depth of about 1 micron, compared to region 11, a voltage drop appears across region 12. The depletion region created by the bias applied to region 11 and substrate 10 continues with increasing voltage to...