Browse Prior Art Database

Silica Film Bubble Domain Devices

IP.com Disclosure Number: IPCOM000078314D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Horstmann, RE: AUTHOR

Abstract

SiO(2) is customarily deposited by vacuum deposition in a multilayered structure used for bubble domain devices. Vacuum deposition requires extensive pump-down time, special fabrication holders, and yields deposits providing thin edge coverage. The present technique proposes that a silica film be spun on, using conventional photoresist techniques. After spinning, the structure is placed into an oven at approximately 200 degrees C for about 10 minutes. This cures the spun SiO(2).

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Silica Film Bubble Domain Devices

SiO(2) is customarily deposited by vacuum deposition in a multilayered structure used for bubble domain devices. Vacuum deposition requires extensive pump-down time, special fabrication holders, and yields deposits providing thin edge coverage. The present technique proposes that a silica film be spun on, using conventional photoresist techniques. After spinning, the structure is placed into an oven at approximately 200 degrees C for about 10 minutes. This cures the spun SiO(2).

In the figure, the bubble domain material has a layer of spun SiO(2) which is useful as a spacer between the bubble domain material and the permalloy pattern. After deposition of the permalloy pattern, an SiO(2) passivating layer is spun onto the entire structure.

The spun SiO(2) is easily etched in buffered HF and can be easily removed after sputter etching.

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