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Plating Fixture for Semiconductor Wafer

IP.com Disclosure Number: IPCOM000078361D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Lynch, JR: AUTHOR

Abstract

A fixture similar to a vanity case, permits the formation of precise con tact areas on a semiconductor wafer by plating. The fixture permits control of current density for improved deposition and plating rate.

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Plating Fixture for Semiconductor Wafer

A fixture similar to a vanity case, permits the formation of precise con tact areas on a semiconductor wafer by plating. The fixture permits control of current density for improved deposition and plating rate.

A case 10 includes leaves 12' and 12'' which are connected together at a hinge 14. The leaves may be closed together to form a sealed case. A lever 16 snaps into a recess 18 for locking the leaves together.

The leaf 12' includes a recess 18 which accommodates a semiconductor wafer of nearly any diameter or shape. A first seal 20 surrounds the wafer. A second seal 22 fits into a recess in the leaf 12'. A handle 24 is fastened to the backside of the leaf 12'. A copper rod 26 fits within the handle and enters the recess 18. A spring contact member 28 attaches to the handle, and includes a wire pad for contact to the surface of a wafer in the recess 18.

The leaf 12'' includes an opening 30 for exposing a surface of a semiconductor wafer. A seal 32 matches the seal 20. Seals 20, 32 and 22 establish liquid integrity for the surface of a wafer engaging contact 28, when the leaves 12' and 12'' are locked together. The fixture is placed in an electrolyte which permits the metal to be deposited on the surface of the wafer exposed through the opening 30, as current is supplied through the copper rod 26.

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