Browse Prior Art Database

Uniform Etching of Polycrystalline Silicon

IP.com Disclosure Number: IPCOM000078370D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burdick, RL: AUTHOR

Abstract

Polycrystalline silicon layers are uniformly etched using aqueous potassium hydroxide solutions at molarities ranging from 7.8 to 14.8.

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Uniform Etching of Polycrystalline Silicon

Polycrystalline silicon layers are uniformly etched using aqueous potassium hydroxide solutions at molarities ranging from 7.8 to 14.8.

The etching of windows in polycrystalline silicon layers during the formation of high-density integrated circuit devices requires uniformity, in order to maintain critical line widths. A layer of thermal or pyrolyzed silicon dioxide is first grown on the polycrystalline silicon layer and is patterned to form an etch mask for the silicon layer. The exposed portions of the layer are then etched with an aqueous potassium hydroxide solution at an optimum molarity of 14.6 and at a temperature of 60 degrees C, with a degree of agitation of the solution to a point just below turbidity.

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