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Solution for Etching Platinum Silicide

IP.com Disclosure Number: IPCOM000078377D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gajda, JJ: AUTHOR [+2]

Abstract

Platinum is sintered with silicon at semiconductor ohmic contacts to form platinum-silicide for desired electrical characteristics. It may be desirable to etch away platinum-silicide in reworking defective diodes, for example, without damaging thermal oxide films or layers.

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Solution for Etching Platinum Silicide

Platinum is sintered with silicon at semiconductor ohmic contacts to form platinum-silicide for desired electrical characteristics. It may be desirable to etch away platinum-silicide in reworking defective diodes, for example, without damaging thermal oxide films or layers.

A solution of potassium ferrocyanide and sodium hydroxide was found to be effective in etching away platinum-silicide without damaging the thermal SiO(2) layer. The etch has application in analysis of failed semiconductors. Wafers in manufacturing, with unsatisfactory electrical characteristics due to the platinum- silicide, may be reworked by removing the platinum-silicide layer.

A typical etch solution composition comprises 5 grams of sodium hydroxide and 20 grams of potassium ferrocyanide in 50 ml water. The solution is heated to 80 degrees C and the platinum-silicide semiconductor contacts are completely removed, after 50 seconds etch exposure.

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