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Etching Patterns in Thick Garnet Films

IP.com Disclosure Number: IPCOM000078401D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+2]

Abstract

Garnets have been shown to support magnet bubble domains, by a stress-induced uniaxial anisotropy. However, garnets are hard, and quite difficult to etch. It is known that sputtered films of garnet can be prepared in the amorphous state, and then recrystallized to produce magnetic bubbles which are movable.

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Etching Patterns in Thick Garnet Films

Garnets have been shown to support magnet bubble domains, by a stress- induced uniaxial anisotropy. However, garnets are hard, and quite difficult to etch. It is known that sputtered films of garnet can be prepared in the amorphous state, and then recrystallized to produce magnetic bubbles which are movable.

It has been found, that garnets ars more readily etchable in the amorphous state. Accordingly, garnet films may be patterned by first preparing the garnet as an amorphous layer, and then etching the layer to form the desired pattern, when etching and cleaning are complete, the film is thermally recrystallized, yielding a single crystal structure, exhibiting the etched pattern.

Using this technique, it has been found that amorphous garnet materials etch orders of magnitude faster than the crystalline form of garnet. For example, Gd.(3) Y(2.7) Fe(3.8) Ga(1.2) O(12) etched with HCl about 100 times faster in the amorphous form, than in the crystalline form. Other acids which might be employed to etch garnets in the amorphous form, are HCl-HAC, H(2)SO(4)- H(3)PO(4), and H(3)PO(4). Noteworthy is the fact that these acids etch the amorphous garnet cold, while crystallized garnet requires hot acids.

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