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Double Heterojunction Laser Arrays

IP.com Disclosure Number: IPCOM000078409D
Original Publication Date: 1972-Dec-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

A procedure for making an array of double heterojunction (DH) lasers is described wherein diffusion, rather than etching, is employed to achieve isolation between lasers, allowing for good heat conduction away from each laser as well as ease of making an ohmic contact to the laser.

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Double Heterojunction Laser Arrays

A procedure for making an array of double heterojunction (DH) lasers is described wherein diffusion, rather than etching, is employed to achieve isolation between lasers, allowing for good heat conduction away from each laser as well as ease of making an ohmic contact to the laser.

The array is made as shown in the figure. A p-type GaAs substrate 2 is the base, above which are grown, by liquid phase epitaxy, the following successive layers, namely, P-type Al(x)Ga(1-x) As 4, P-type GaAs 6, N type Al(x)Ga(1-x) As 8 and N type GaAs 10. A mask 12 is appropriately etched so that a P-type diffusant, such as zinc, can be diffused through layers 10 and 8 to create isolating regions 14. Using diffusion, instead of etching, for isolation permits more material to surround each PN junction of the DH laser, so that there is quick conduction of heat from each junction through this surrounding region.

In some instances, the top GaAs(n) layer 10 can be dispensed with in that it is easy to make an N-type contact to the N-type Al(x)Ga(1-x) As 8, removing the need to have the layer 10 serve as an ohmic contact-accommodating layer.

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