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Apparatus for Continuous Liquid Phase Epitaxy Growth

IP.com Disclosure Number: IPCOM000078424D
Original Publication Date: 1973-Jan-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+3]

Abstract

A fixture has been devised which can continuously grow liquid phase epitaxy (LPE) layers simultaneously on many wafers.

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Apparatus for Continuous Liquid Phase Epitaxy Growth

A fixture has been devised which can continuously grow liquid phase epitaxy (LPE) layers simultaneously on many wafers.

As seen in the figure, a two-zone furnace is provided, wherein zone I is always kept at a predetermined temperature T(1) while zone II is initially maintained at this temperature, but gradually varied by automatic controls. By way of example, three wafers are being simultaneously processed. The melt chamber contains the chosen material, i.e., molten GaAs or the like, under sufficient pressure to grow many crystals by liquid phase epitaxy (LPE).

Substrates onto which LPE growths will occur are placed inside plate 2 through openings C in plate 1. Openings C are then filled with melt by pushing both plate 1 and plate 2 relative to each other so that the openings C and substrates are superimposed. When superimposition is reached, both plates are moved simultaneously to the melt chamber so that each substrate is consecutively fed the melt. After filling, both Plates are returned to zone II where epitaxial layers are deposited on their respective substrates, by lowering the temperature of zone II in a regulated or programmed manner.

After the growth has been completed, plate 1 only is moved to the right so that the molten material in each of the openings C in such plate is dumped into the dump tank through openings B in plate 2. After dumping, plates 1 and 2 are removed from the furnace so that the...