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Browse Prior Art Database

Making Double Heterojunction Lasers

IP.com Disclosure Number: IPCOM000078458D
Original Publication Date: 1973-Jan-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 66K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+3]

Abstract

A system has been devised, in the manufacture of double heterojunction (DH) lasers, for preventing the residue of a previous melt that is part of the manufacturing process from contaminating subsequent steps in that process.

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Making Double Heterojunction Lasers

A system has been devised, in the manufacture of double heterojunction (DH) lasers, for preventing the residue of a previous melt that is part of the manufacturing process from contaminating subsequent steps in that process.

In prior known techniques for continuously growing, by liquid phase epitaxy (LPE), layers of material on a plurality of wafers, such growth took place by moving a first plate containing the melt in wells in the Plate over a second plate containing a wafer in suitable openings in such second plate. After an initial heating step, growth took place by cooling the melt at a predetermined rate. After the required cooling had taken place, the first plate was moved to advance one of its wells to an adjacent wafer. In so doing, a small amount of melt left on the surface of a first substrate was mixed with an adjacent melt at the next station in the growing process.

Figs. 1A and 1B illustrate one means for avoiding such contamination. Fig. 1B is a cross section of the device that has four melt stations 2 in a push plate 4 (see Fig. 1A), each of which lies over a substrate 6 in a well in housing 8. After an LPE growth has taken place at a given station or position, push plate 4 is moved to the right so that melt from station 3 will cover the substrate in the fourth position, melt from station 2 will cover the substrate in the third position, etc. Push plate 4 is provided with slots 10 so that any residue on the subst...