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Browse Prior Art Database

Providing Uniform Liquid Phase Epitaxy Films

IP.com Disclosure Number: IPCOM000078465D
Original Publication Date: 1973-Jan-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Giess, EA: AUTHOR

Abstract

In the deposition of liquid phase epitaxy films on substrates, a salient problem to be overcome is the thickness gradients of these films which result from known deposition procedures. Such nonuniform thicknesses advantageously affect the operation of such films, for example, in magnetic bubble devices and the like. In the method described, there are obtained liquid phase epitaxy films of substantially uniform thicknesses and compositions on substrates. the method is also advantageously utilized in mass production techniques.

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Providing Uniform Liquid Phase Epitaxy Films

In the deposition of liquid phase epitaxy films on substrates, a salient problem to be overcome is the thickness gradients of these films which result from known deposition procedures. Such nonuniform thicknesses advantageously affect the operation of such films, for example, in magnetic bubble devices and the like. In the method described, there are obtained liquid phase epitaxy films of substantially uniform thicknesses and compositions on substrates. the method is also advantageously utilized in mass production techniques.

The apparatus for carring out the method is shown in side elevation in Fig. 1 and in end elevation in Fig. 2. In this apparatus, a plurality of polished surface substrate wafers 10 are coaxially mounted on a wire rack 12 which may be of platinum. the wafers 10 are in opposed face-to-thickness axes of these wafers lie in a horizontal plane and their polished surfaces lie in vertical planes.

In the liquid phase epitaxy deposition step, the rack 12 carrying wafers 10 is immersed into an appropriate crystal growth melt and the horizontal axis of the rack is moved with a circular motion at a constant velocity, to produce a smooth nondurables shearing action in the liquid at the melt-wafer interface. Such circular motion can be typically imparted by moving the axis of rack 12 in a circle having a diameter equal to that of a wafer, whereby the rack axis generates an imaginary right circular cylinder whos...