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Removing Elemental Platinum from Silicon Deposits

IP.com Disclosure Number: IPCOM000078531D
Original Publication Date: 1973-Jan-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Parker, AL: AUTHOR [+2]

Abstract

A blanket layer of platinum is evaporated to a thickness of 400-500 angstroms on semiconductor device wafers, after contact holes have been opened by a conventional photolithographic process.

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Removing Elemental Platinum from Silicon Deposits

A blanket layer of platinum is evaporated to a thickness of 400-500 angstroms on semiconductor device wafers, after contact holes have been opened by a conventional photolithographic process.

The platinum coated wafers are then sintered at 500 degrees C. Platinum silicide, an alloy of platinum and silicon, is formed in the open contact areas where the silicon is exposed. The platinum silicide aluminum conductor line structure. Before the aluminum is deposited, the excess platinum in the noncontact areas is removed. This is accomplished by immersing the platinized substrate in a highly polar solvent, such as a mixture of isopropyl alcohol and water. A continuous film of platinum is separated from the wafer surface, leaving behind the platinum silicide in the open contact holes.

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