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Semiconductor Germanium Polishing

IP.com Disclosure Number: IPCOM000078534D
Original Publication Date: 1973-Jan-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Basi, JS: AUTHOR

Abstract

Germanium polishing requires a multistep oxidation and dissolution process. The first oxidation step should be more rapid than the other steps in the process. Sodium hypochlorite solutions were found to remove germanium from single-crystal surfaces but high, smooth featureless surfaces could not be obtained.

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Semiconductor Germanium Polishing

Germanium polishing requires a multistep oxidation and dissolution process. The first oxidation step should be more rapid than the other steps in the process. Sodium hypochlorite solutions were found to remove germanium from single- crystal surfaces but high, smooth featureless surfaces could not be obtained.

The oxidation step should be very rapid compared to dissolution in featureless polishing of germanium surfaces. Therefore, the use of sodium hypobromite solution in the complete absence of sodium hydroxide, produces a highly lustrous polished surface on germanium semiconductor wafers. The polishing rate illustrated was found to be dependent on sodium hypobromite concentration in the lower ranges. These observations can be explained by considering oxidation of germanium as follows: Ge + NaBrO -------> GeO -------->
GeO(2).

The process comprises oxidizing germanium in situ while utilizing known mechanical polishing means, and removing the oxide formed by water washing in a continuous or batch method, or any other suitable solvent.

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