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Luminescent Solid State Device Utilizing DC Avalanche Injection

IP.com Disclosure Number: IPCOM000078585D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

DiStefano, TH: AUTHOR

Abstract

A solid-state luminescent device, compatible with a highly developed semiconductor technology, has been devised that operates by utilizing DC avalanche injection across a semiconductor surface.

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Luminescent Solid State Device Utilizing DC Avalanche Injection

A solid-state luminescent device, compatible with a highly developed semiconductor technology, has been devised that operates by utilizing DC avalanche injection across a semiconductor surface.

The DC operated luminescent device can be constructed, as shown in Fig. 1A, comprising a semiconductor layer 2, such as N-type silicon or a wide-gap material such as GaAs or GaP, a luminescent layer 4, such as ZnSe, and a semitransparent electrode 6, such as SnO, with a battery 8 applying a voltage across the device. Where the luminescent layer 4 is highly reactive with the semiconductor 2, then a thin layer 10 of SiO(2) is employed between them, as seen in Fig. 1B.

An understanding of how the devices of Figs. 1A and 1B operate can be better understood by considering them in conjunction with Figs. 2A and 2B. The PN junction of Fig. 2A avalanches at the surface of the semiconductor if an auxiliary field, supplied by battery 12, is applied across the semiconducting junction. This avalanche injects electrons into the insulating layer, such injected electrons being drawn through the insulating layer by the positive voltage on the semitransparent electrode, so that the intermediate luminescent layer is excited to emit light at the interface between semiconductor and phosphor.

If one examines a portion of Fig. 2A, shown enlarged in Fig. 2B, one finds that the PN region is distorted by the application of a positive v...