Browse Prior Art Database

Integrated CMOS Structure

IP.com Disclosure Number: IPCOM000078670D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Kroell, KE: AUTHOR

Abstract

The complementary metal-oxide semiconductor (CMOS) structures known to date, i.e., structures comprising both N channel and P channel metal-oxide oxide semiconductor field-effect transistors (MOSFET's), require much semiconductor space as they are arranged adjacent to each other.

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Integrated CMOS Structure

The complementary metal-oxide semiconductor (CMOS) structures known to date, i.e., structures comprising both N channel and P channel metal-oxide oxide semiconductor field-effect transistors (MOSFET's), require much semiconductor space as they are arranged adjacent to each other.

A CMOS structure as shown is recommended, wherein one pair of oppositely conductive FET's are superimposed upon each other, so that semiconductor space is required for only one MOSFET.

A process for manufacturing such a sandwiched CMOS structure could consist of the following steps:
a) Diffusion or ion implantation of N+ doped source and

drain regions 1 and 2 into a P substrate 3.
b) Application of an oxide layer 4 and provision of gate

openings for the N channel FET.
c) Growth of gate oxide 5.
d) Formation of metallization layer 6 of temperature-resistant

metal, and etching of the conductor pattern for gate

electrode 7 and the remaining source and drain contacts.
e) Pyrolytic application of oxide layer 8 and provision of

gate openings for the complementary P channel FET.
f) Pyrolytic application of gate oxide layer 9 for the P

channel FET structure.
g) Opening up of the source and drain contact holes in

oxide layer 8.
h) Pyrolytic application of a suitably doped N conductive

silicon layer 10, which does not have to be monocrystalline.
i) Diffusion or ion implantation of source and drain regions

11 and 12 through silicon layer 10.

By using ion implantation for t...