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Reactive Evaporation of SiO(2) Layers in an Activated Oxygen Atmosphere

IP.com Disclosure Number: IPCOM000078680D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Schaefer, R: AUTHOR [+2]

Abstract

When Si or SiO(2) is evaporated in an oxygen atmosphere, the oxide is found to be deficient in oxygen. This can be avoided, without abandoning the advantages of evaporation, by producing an oxygen plasma (DC or RC) in the evaporation dome. In addition, the applied field causes negative charges to be built into the growing oxide, so improving the metal-oxide semiconductor characteristics of the latter.

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Reactive Evaporation of SiO(2) Layers in an Activated Oxygen Atmosphere

When Si or SiO(2) is evaporated in an oxygen atmosphere, the oxide is found to be deficient in oxygen. This can be avoided, without abandoning the advantages of evaporation, by producing an oxygen plasma (DC or RC) in the evaporation dome. In addition, the applied field causes negative charges to be built into the growing oxide, so improving the metal-oxide semiconductor characteristics of the latter.

By suitably controlling the field, the substrate and the growing oxide layer can be resputtered to remove impurities from the surface, which leads to the quality of the oxide being improved further.

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