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Low Temperature Sintering Materials for Fabricating Multilayer Ceramic Substrates

IP.com Disclosure Number: IPCOM000078704D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Agajanian, AH: AUTHOR

Abstract

These ceramic materials can be sintered in the temperature range of 850 degrees C to 1100 degrees C in an open furnace and have a dielectric constant of about 6.

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Low Temperature Sintering Materials for Fabricating Multilayer Ceramic Substrates

These ceramic materials can be sintered in the temperature range of 850 degrees C to 1100 degrees C in an open furnace and have a dielectric constant of about 6.

Conventional Al(2)O(3) must be sintered at temperatures of the order of 1450 degrees C in a hydrogen furnace. This high-sintering temperature prevents the use of the more desirable conductors such as copper, silver and silver palladium metals as electrodes, necessitating the use of refractory metals such as molybdenum, and manganese. While the sintering temperature of Al(2)O(3) can be lowered by the addition of a glassy phase, the addition of the glassy phase has deleterious effects, namely, it renders the material brittle and difficult to handle and reduces thermal conductivity.

These compositions are given by the following formula:

Cu/2+/(x)Zn/2+/(y)Ge/4+/(z)Bi/3+/(u)La/3+/(v)Al/3+/(w)O/2-/(4) where 0.20 < or - x < or - 1.20 0.00 < or - y < or - 0.60 0.00 < or - z < or - 0.20 0.00 < or - u < or - 0.03 0.00 < or - v < or - 0.02 1.50 < or - w < or - 2.00. All the ions in the above formula fit in the A and B sites in the spinel structure. The conditions for spinel structure and stoichiometry requirements impose the following restrictions on the values of x, y, z, u, v and w: (1) x + y + z + u + v + w = 3 (2) 2x + 2y + 4z + 3 (u + v + w) = 8

It should be noted that the ions in this formula may be substituted by ions of the sa...