Browse Prior Art Database

Reduction of Oxide Implant Damage

IP.com Disclosure Number: IPCOM000078708D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Peressini, PP: AUTHOR [+3]

Abstract

This process is for the treatment of a gate oxide in a field-effect transistor (FET) following ion implantation, to reduce the extent of damage occurring in the oxides by the implantation through the oxide.

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Reduction of Oxide Implant Damage

This process is for the treatment of a gate oxide in a field-effect transistor (FET) following ion implantation, to reduce the extent of damage occurring in the oxides by the implantation through the oxide.

Low-energy ion implantation at dosages of 10/13/ to 10/14//cm/2/ through thin-thermal oxides on silicon, have been found to severely degrade the electrical time-zero breakdown voltage characteristics of the oxide. No improvement in the breakdown voltage characteristics occurs, if a layer of phospho-silicate glass is deposited prior to the implant.

This process for minimizing or eliminating ion implantation damage, is to deposit a thin layer of phospho-silicate glass following the ion implantation step. The phospho-silicate glass can be deposited by known chemical vapor deposition techniques.

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