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Electromigration Resistance for Ta Au Ta Metallurgy

IP.com Disclosure Number: IPCOM000078714D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Revitz, M: AUTHOR [+4]

Abstract

The electromigration resistance of a Ta-Au-Ta interconnection metallurgy stripe is improved in this process by heat treatment. In this process, a heat treatment is used to fill the grain boundaries of Au to thereby alter the electromigration characteristics. After fabrication of a composite laminated Ta-Au-Ta metallurgy stripe, the resultant structure is heated for prolonged periods of time on the order of six to fifteen hours at a relatively low temperature on the order of 350-550 degrees C. This serves to diffuse Ta into the grain boundaries of the Au conductive film.

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Electromigration Resistance for Ta Au Ta Metallurgy

The electromigration resistance of a Ta-Au-Ta interconnection metallurgy stripe is improved in this process by heat treatment. In this process, a heat treatment is used to fill the grain boundaries of Au to thereby alter the electromigration characteristics. After fabrication of a composite laminated Ta- Au-Ta metallurgy stripe, the resultant structure is heated for prolonged periods of time on the order of six to fifteen hours at a relatively low temperature on the order of 350-550 degrees C. This serves to diffuse Ta into the grain boundaries of the Au conductive film.

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