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Sense Amplifier for Read Only Storage Monolithic Memories

IP.com Disclosure Number: IPCOM000078715D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Lohrey, FH: AUTHOR

Abstract

In Schottky barrier diode read-only monolithic memories, a standard method of array implementation is shown in Fig. 1. T2, R2 and I2 form an array select circuit which is used to gate the operation of the entire array. This circuit is shown in the active or normal state. The circuit "deselects" the array by additional circuitry, not shown or necessary for the present description, which draws current through R2 and results in a down level output at the emitter of T2. T1, R1 and I1 form an anode line driver which is used to select an array line.

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Sense Amplifier for Read Only Storage Monolithic Memories

In Schottky barrier diode read-only monolithic memories, a standard method of array implementation is shown in Fig. 1. T2, R2 and I2 form an array select circuit which is used to gate the operation of the entire array. This circuit is shown in the active or normal state. The circuit "deselects" the array by additional circuitry, not shown or necessary for the present description, which draws current through R2 and results in a down level output at the emitter of T2. T1, R1 and I1 form an anode line driver which is used to select an array line.

There is one driver for each array anode line. The driver is shown in the select state. It deselects the anode line by additional circuitry, not shown, which draws current through R1 and results in a down level output at the emitter of T1. I array is a switchable current sink which forms the cathode line driver. When this current is ON, the attached cathode line is selected; when it is OFF, the line is deselected. D1 is one of many array diodes which form the storage elements.

In the formation or "hard-wiring" of the read-only memory, the diodes are selectively made functional or nonfunctional. If the diode is functional, it represents a stored "1"; if the diode is not functional, it represents a stored "0". T3, T4, I3, T5, R3 form the sense amplifier. An up level at the sense node (with respect to the VREF level) indicates a stored 1 and results in an up output level. A d...