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Copper Thin Film Conductors

IP.com Disclosure Number: IPCOM000078730D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

D'Heurle, FM: AUTHOR [+4]

Abstract

Electromigration failure in copper conductors may be reduced by the addition of beryllium as an alloying element. Under similar test conditions of 3 x 10/6/ A/cm/2/ and 290 degrees C, failures in pure copper samples occurred at 41, 88, 88, 91, 116 and 133 hours. In an alloy with a nominal composition of about 2 wt% Be, failures did not occur up to 582 hours. Beryllium increases the resistivity of the copper.

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Copper Thin Film Conductors

Electromigration failure in copper conductors may be reduced by the addition of beryllium as an alloying element. Under similar test conditions of 3 x 10/6/ A/cm/2/ and 290 degrees C, failures in pure copper samples occurred at 41, 88, 88, 91, 116 and 133 hours. In an alloy with a nominal composition of about 2 wt% Be, failures did not occur up to 582 hours. Beryllium increases the resistivity of the copper.

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