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Semiconductor Device Metallization

IP.com Disclosure Number: IPCOM000078742D
Original Publication Date: 1973-Feb-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Enichen, WA: AUTHOR [+2]

Abstract

Improved adhesion of Cr or Ti based metallurgies (e.g., Cr-Ag;Cr, Cr-Cu-Cr, Ti-Ag-Cr) to silicon dioxide, silicon nitride or ceramic surfaces of semiconductors, as well as improved adhesion between Cr-Ag, Cr-Cu or Ti-Ag, can be obtained with the presence of a certain minimum percentage of water vapor in an evaporation system. The amount of water vapor required depends on the evaporator; in general, vapor introduced by any method (e.g., bleeding of water vapor by a leak valve or heating of a treated ceramic tube positioned inside the evaporator) to a pressure of about 10/-5/Torr.

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Semiconductor Device Metallization

Improved adhesion of Cr or Ti based metallurgies (e.g., Cr-Ag;Cr, Cr-Cu-Cr, Ti-Ag-Cr) to silicon dioxide, silicon nitride or ceramic surfaces of semiconductors, as well as improved adhesion between Cr-Ag, Cr-Cu or Ti-Ag, can be obtained with the presence of a certain minimum percentage of water vapor in an evaporation system. The amount of water vapor required depends on the evaporator; in general, vapor introduced by any method (e.g., bleeding of water vapor by a leak valve or heating of a treated ceramic tube positioned inside the evaporator) to a pressure of about 10/-5/Torr.

Results show no adverse effect of this technique on resistivity and electromigration lifetime of Ag in a Cr-Ag-Cr metallization. Substrate temperature and evaporation rate do not have any effect on the adhesion of metal film deposited under the above conditions. Strong adhesion and shiny surfaces of Cr- Ag-Cr are obtained at 100 degrees C. with 20 Angstroms/Sec. evaporation rate; this film has twice the electromigration lifetime of that evaporated at 200 degrees
C. A low substrate temperature allows for high production rates since the cooling of the evaporator is the slowest step in a metallization process. A shiny and smooth surface allows for better definition of subsequent photoresist patterns as well as easy removal of photoresist without much rubbing. The smooth surface also helps in uniformly sputter etching the land pattern.

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