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Tin Oxide Etching Technique

IP.com Disclosure Number: IPCOM000078765D
Original Publication Date: 1973-Mar-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Bondur, JA: AUTHOR

Abstract

This lift-off etching process is capable of forming fine line patterns of tin oxide in a reproducible controllable manner. In this process, a blanket layer 10 of aluminum is deposited on a substrate 12 as for example glass, as shown in Fig. 1. A reverse pattern is formed in the aluminum layer 10 of the desired tin pattern using conventional photolithographic techniques, resulting in the structure shown in Fig. 2, depicting the reverse pattern 14 of aluminum. A blanket layer of tin oxide 16, Fig. 3, is deposited by spraying or other techniques on the surface of substrate 12 over pattern 14. The substrate is then etched in a suitable aluminum etch which does not materially affect tin oxide.

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Tin Oxide Etching Technique

This lift-off etching process is capable of forming fine line patterns of tin oxide in a reproducible controllable manner. In this process, a blanket layer 10 of aluminum is deposited on a substrate 12 as for example glass, as shown in Fig.
1. A reverse pattern is formed in the aluminum layer 10 of the desired tin pattern using conventional photolithographic techniques, resulting in the structure shown in Fig. 2, depicting the reverse pattern 14 of aluminum. A blanket layer of tin oxide 16, Fig. 3, is deposited by spraying or other techniques on the surface of substrate 12 over pattern 14. The substrate is then etched in a suitable aluminum etch which does not materially affect tin oxide. This etching step removes the aluminum pattern 14 and the overlying layer portions of tin oxide 16, leaving the desired pattern 18 of tin oxide, as shown in Fig. 4. Preferably, in the latter etching step, the etch is heated to 100 degrees C and the sample ultrasonically agitated.

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