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Improving the Adherence of Conductive Patterns to Insulators

IP.com Disclosure Number: IPCOM000078792D
Original Publication Date: 1973-Mar-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Roesch, H: AUTHOR [+3]

Abstract

Conductive patterns, having a good adherence to insulators can be produced by selectively implanting ions of the conductive material into the insulator by an ion beam, and by subsequently dipping the Insulator into the molten conductive material.

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Improving the Adherence of Conductive Patterns to Insulators

Conductive patterns, having a good adherence to insulators can be produced by selectively implanting ions of the conductive material into the insulator by an ion beam, and by subsequently dipping the Insulator into the molten conductive material.

To produce, for example, Cu-lines on a ZrC-substrate, Cu is implanted into the ZrC first at an energy of 400 kV corresponding to a 1400 Angstroms depth of penetration and subsequently at an energy of 50 kV. The focused ion beam having a diameter of 10 Mu is moved under the control of a computer at a speed of abt. 200 cm/sec., thus eliminating the need for masks. Under these conditions and at an ion current of 100 Mu A, a Cu-ion density in the ZrC of 10/20/cm/3/ can be produced which is sufficient to generate a seed layer, which is selectively wetted and thickened by dipping the ZrC-substrate into molten Cu.

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