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Method of H(c) Control in Hard Magnetic Films

IP.com Disclosure Number: IPCOM000078895D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR

Abstract

In order to control the coercivity H(c) in hard magnetic films, these films are exchange-coupled to thin films deposited on them. The thin film has in-plane anisotropy, while the hard magnetic film has anisotropy which is normal to its plane. When the two films are in intimate contact, the H(c) of the hard film is materially reduced.

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Method of H(c) Control in Hard Magnetic Films

In order to control the coercivity H(c) in hard magnetic films, these films are exchange-coupled to thin films deposited on them. The thin film has in-plane anisotropy, while the hard magnetic film has anisotropy which is normal to its plane. When the two films are in intimate contact, the H(c) of the hard film is materially reduced.

Fig. 1 shows a magneto-optic system in which a hard magnetic film of MnGeAl is deposited on a substrate. An Fe film having in-plane anisotropy intimately contacts the MnGeAl film. Information is written into the storage film and read out using a laser beam and a detector.

Fig. 2 shows the use of a hard magnetic film having controlled H(c) as a bias layer in a magnetic bubble domain environment. The garnet film is deposited on a suitable substrate and has magnetic bubble domains therein. Deposited on this is an MnGeAl film which functions as a bias layer. An Fe film having in-plane magnetization is deposited on the hard MnGeAl film. An insulation layer of SiO(2) is then provided, after which the propagation means (such as conductors or permalloy) is deposited.

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