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Layered Structure for Thermal Bubble Writing Erasing Reading on Chalcogenides

IP.com Disclosure Number: IPCOM000078897D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

von Gutfeld, RJ: AUTHOR

Abstract

The so called "bubble" form of writing was first described at the International Conference on Amorphous and Liquid Semiconductors, Abstract JA8, J. Feinleib et al, Ann Arbor, Michigan, 1971. One of the important parameters for this type of writing (which consists in the formation of a void by heating at the chalcogenide-substrate interface) was that the heat in the form of a light beam had to be directed through the transparent substrate, in order to create the proper temperature profile. The light was absorbed by the chalcogenide.

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Layered Structure for Thermal Bubble Writing Erasing Reading on Chalcogenides

The so called "bubble" form of writing was first described at the International Conference on Amorphous and Liquid Semiconductors, Abstract JA8, J. Feinleib et al, Ann Arbor, Michigan, 1971. One of the important parameters for this type of writing (which consists in the formation of a void by heating at the chalcogenide-substrate interface) was that the heat in the form of a light beam had to be directed through the transparent substrate, in order to create the proper temperature profile. The light was absorbed by the chalcogenide.

The purpose of the present structure is to provide an alternative for the case
(1) where the substrate is quite thick as, for example, in a disk application in which focusing through the substrate results in a relatively large bit or spot or where the disc is opaque, and (2) where the memory material is rather non absorbing to the laser light being used as, for example, is the situation for a Se based material with GaAs light.

The proposed structure is shown in Figs. 1a and 1b for both disk and tape configurations. In both cases the light is now incident directly on the memory material (an antireflection coating can be used but is not shown). The light is absorbed only slightly by the memory material but strongly by the metal film, typically molybdenum. The MYLAR* acts as a thermal resistive path so that the heat is released from the molybdenum, principally t...