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Chemical Etching of Rhodium Thin Films

IP.com Disclosure Number: IPCOM000078903D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gangulee, A: AUTHOR

Abstract

A chemical solution for etching rhodium thin films is proposed which solution comprises: hydrochloric acid, acetic acid or boric acid and a small amount of bromine.

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Chemical Etching of Rhodium Thin Films

A chemical solution for etching rhodium thin films is proposed which solution comprises: hydrochloric acid, acetic acid or boric acid and a small amount of bromine.

A wide range of etching rates (100-1000 AU/min) can be obtained by varying the temperature and/or the hydrochloric acid concentration.

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