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Electroetching of Rhodium Thin Films

IP.com Disclosure Number: IPCOM000078904D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gangulee, A: AUTHOR

Abstract

A chemical solution, with temperature and current density is proposed for electroetching of rhodium films.

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Electroetching of Rhodium Thin Films

A chemical solution, with temperature and current density is proposed for electroetching of rhodium films.

It is proposed to electroetch rhodium thin films in a solution of methyl alcohol containing: perchloric acid, acetic acid and formic acid. The electrolyte temperature will be maintained at -20 degrees C or less, and the current density would be approximately 5-20 A/cm/2/. Typical etch rates achieved are 300-1000 AU/min.

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