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Technique for the Quantitative Determination of Adhesion of Films

IP.com Disclosure Number: IPCOM000078906D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Tan, S: AUTHOR

Abstract

A technique for the quantitative determination of the adhesion of films onto a substrate is proposed. This technique relies on the fact that film stressed beyond its adhesive strength will separate from its substrate.

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Technique for the Quantitative Determination of Adhesion of Films

A technique for the quantitative determination of the adhesion of films onto a substrate is proposed. This technique relies on the fact that film stressed beyond its adhesive strength will separate from its substrate.

When a film is ion-implanted with any species of ions it becomes stressed. The amount of stress in the film can be controlled by the choice of the ion species and dose. See, "Sensitive Technique for Studying Ion-Implantation Damage", E. P. EerNisse, Appl. Phys. Letters 18, #12, 15 June 1971. A typical stress-dose relationship is shown in Fig. 1. The depth of the stress can be controlled by varying the implantation energy (see Fig. 2). Hence, any thickness of film can be stressed to any desired level.

The adhesion of a film onto a substrate is determined by implanting the film at an energy, which will give a stress depth just equal to the film thickness.

Then, the dose of the implanted ion is increased until the film separates from its substrate. The stress, corresponding to this dose, is then equal to the adhesive stress. The stress level can be varied by some nine orders of magnitude by the proper choice of the ion species. Furthermore, this technique is applicable to any combination of film and substrate material (metallic or nonmetallic).

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