Browse Prior Art Database

Preparation of Metallic Oxides by Reactive RF Sputtering

IP.com Disclosure Number: IPCOM000078914D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Basavaiah, S: AUTHOR [+2]

Abstract

A technique to control the thickness of an oxide layer utilized in Josephson junction devices is proposed.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Preparation of Metallic Oxides by Reactive RF Sputtering

A technique to control the thickness of an oxide layer utilized in Josephson junction devices is proposed.

Referring to the figure a metallic disc 10, whose oxide is to be deposited, comprises the cathode of an RF plasma 12. The oxide is deposited on substrate 14 mounted on anode 16. Plasma 12 consists of a variable mixture of argon with oxygen at a pressure of about 10 mu (optional). The argon ions of the plasma sputter the metal off the cathode at a fairly slow rate. The sputtered metal atoms react with the oxygen ions, producing the oxide of the metal 10 deposited on substrate 14.

Oxide deposition rates of as low as 2 angstroms/min may be achieved. Where the oxide is Al(2)O(3) and PbO, by utilizing this technique, a number of junctions ranging in resistance from about 10/+10/ omega to 10/-2/ omega have been obtained. Good quality junctions consisting of In + Au + Pb/Al(2)O(3)/Pb + Au + Pb have also been produced. The current density was varied from about 10 amp/sq cm to greater than 1000 amp/sq cm, by varying the time between 3 minutes and 2.5 minutes.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]