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Compound BaGa(4)O(7) and its Method of Preparation

IP.com Disclosure Number: IPCOM000078915D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Kuptsis, JD: AUTHOR [+3]

Abstract

New compounds have been found which may have application as substrates for hexagonal ferrite film, which support magnetic bubble domains.

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Compound BaGa(4)O(7) and its Method of Preparation

New compounds have been found which may have application as substrates for hexagonal ferrite film, which support magnetic bubble domains.

A new compound BaGa(4)O(7) (33.3 mole % BaO-66.7 mole % Ga(2)O(3)) has been prepared. The compound appears to have a hexagonal-like crystal structure. Single crystals of the compound are obtained by the Czochralski method of crystal growth from a melt of BaGa(4)O(7). The melt is prepared by heating BaCO(3) and Ga(2)O(3) powders (33.3 mole % BaO-66 mole % Ga(2)O(3)) in an iridium crucible to about 1600 degrees C. The compound can be prepared by sintering the correct weights of BaCO(3) (or BaO) and Ga(2)O(3) near 1300 degrees C, before melting in an iridium crucible.

BaGa(4)O(7) can also be obtained in single crystalline form by the Czochralski or Bridgman methods of crystal growth, from a melt of BaGa(4)O(7) containing either an excess of BaO or an excess of Ga(2)O(3). The excess component lowers the melting point and will permit crystal growth from a platinum crucible, with a radio-frequency generator as a source of heating.

It is probable that the compound SrGa(4)O(7) exists in the SrO-Ga(2)O(3) base diagram. In the Journal of Inorganic Nuclear Chem., 30, 63 (1968), C. W. Hoffman and J. J. Brown suggest the absence of any compounds between 50 and 100 mole % Ga(2)O(3) in the SrO-Ga(2)O(3). However, the existence of BaGa(4)O(7) (66.6% Ga(2)O(3) - 33.3% BaO) supports the possibil...