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Integration of Magnetic Bubble Domain Devices with Semiconductor Sensing Devices

IP.com Disclosure Number: IPCOM000078916D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 13K

Publishing Venue

IBM

Related People

Chaudhari, P: AUTHOR [+3]

Abstract

The current magnetic bubble domain technology is dependent on highly perfect single crystals of garnet materials, with stress or chemically induced uniaxial anisotropy. This technology exists, due to the advances made in the growth of magnetic garnets on closely matched nonmagnetic garnet substrates. In particular, rare earth substituted, gallium substituted, YIG on gadolinium gallium garnet (GGG). Drawbacks of these systems are the substrate film interdependencies for defects, stress, lattice matching, as well as the chemical compatibility necessary for processing. The technology is exclusive of normal semiconductor processing, therefore, limiting some of the advantages one would derive by direct integration.

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Integration of Magnetic Bubble Domain Devices with Semiconductor Sensing Devices

The current magnetic bubble domain technology is dependent on highly perfect single crystals of garnet materials, with stress or chemically induced uniaxial anisotropy. This technology exists, due to the advances made in the growth of magnetic garnets on closely matched nonmagnetic garnet substrates. In particular, rare earth substituted, gallium substituted, YIG on gadolinium gallium garnet (GGG). Drawbacks of these systems are the substrate film interdependencies for defects, stress, lattice matching, as well as the chemical compatibility necessary for processing. The technology is exclusive of normal semiconductor processing, therefore, limiting some of the advantages one would derive by direct integration.

Since the discovery of amorphous magnetic bubble domain materials, the substrate magnetic bubble domain dependency no longer exists, therefore, the integration of magnetic bubble domain materials and semiconductor electronic detectors are achievable. Thus, the integration of magnetic bubble domain materials with electronic semiconductor devices by means which were heretofore impractical, due to the incompatibility of the two systems, is achievable.

A magnetic bubble domain material such as GdCo(5) is deposited on a silicon device wafer. Areas are delineated to form a structure such that magnetic bubbles are passed over a device, which is both a sensor and an amplifier. An example of such a device is a field-effect transistor (FET) biased near threshold. If a magnetic bubble is passed over the gate region, the moving magnetic field associated with the bubble can be used to switch the FET. The signal from the FET is much stronger than the signal one would get from a magnetoresistive or Hall device detector directly, therefore the bubble has been detected and its signal amplif...