Browse Prior Art Database

Contamination Control Environment

IP.com Disclosure Number: IPCOM000078946D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Hecker, EP: AUTHOR [+2]

Abstract

In processing high-density semiconductor wafers, it is necessary that the ambient atmosphere surrounding the wafer be at a level below Class 100. Great difficulty has been encountered in substantially reducing the particle count and size utilizing conventional systems. It has been found that the in house compressed air line which supplies approximately 40 PSIG, may be utilized to obtain a class environment of at least Class 10 or better.

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Contamination Control Environment

In processing high-density semiconductor wafers, it is necessary that the ambient atmosphere surrounding the wafer be at a level below Class 100. Great difficulty has been encountered in substantially reducing the particle count and size utilizing conventional systems. It has been found that the in house compressed air line which supplies approximately 40 PSIG, may be utilized to obtain a class environment of at least Class 10 or better.

Referring to Fig. 1, the compressed air may enter through a prefilter comprising a 0.08 micron filter 10 and then through a secondary filter 11, an air dryer of the conventional variety 12 and, because of the use of compressed air, an oil absorber 13 into a conventional upright vertical or horizontal laminar flow hood 14.

Alternatively, the compressed air may be fed into a prefilter 20 (Fig. 2) and then through a line 21 into a plurality of filters 22, 23, 24 and 25, which filters are arranged in parallel. The filters, as illustrated in Fig. 2, also serve the purpose of being diffusers and provide a flow of air onto the wafers 26, which are being propelled through an enclosed chamber 27 by a conveyor 28. By maintaining a flow of air in the manner shown, the pressure inside the chamber 27 is sufficient to cause an outflow of air from the wafer entrance 29 and exit 30 of the chamber
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