Browse Prior Art Database

Double Heterojunction Lasers with Double Side Heat Sink Design

IP.com Disclosure Number: IPCOM000078976D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR

Abstract

A method of making a semiconductor double-heterojunction (DH) laser is provided, whereby the substrate on which the semiconductor is grown can be readily etched away.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Double Heterojunction Lasers with Double Side Heat Sink Design

A method of making a semiconductor double-heterojunction (DH) laser is provided, whereby the substrate on which the semiconductor is grown can be readily etched away.

The construction of the DH laser is begun with a germanium wafer which has a 15-25 micron vapor grown epitaxial layer of GaAs deposited on it. This GaAs layer is used as the surface on which subsequent layers comprising the DH laser structure are grown. After the appropriate layers are grown, the top surface is metallized to provide a contact for the DH laser.

The entire device, with the metallized surface facing downward, is mounted in wax on a glass plate which is placed in an etching solution to remove the germanium substrate. A 30% hydrogen peroxide solution, maintained at 40 degrees C, will etch germanium 1800 times faster than the GaAs materials. After removal of the germanium, the GaAs of the DH laser, which is parallel with the active epitaxial layers of the laser, is etched to within several microns of the active layer of the laser in a conventional slow GaAs etch, such as bromine- methanol. Such etched surface is metallized to produce a contact.

The final etched product is then sawed, cleaved or cut into discrete laser chips, which are alloyed to a double heat sink so that heat can be removed from both parallel sides of a completed DH laser.

1