Browse Prior Art Database

Selective Etch for Gallium Arsenide

IP.com Disclosure Number: IPCOM000078980D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Potemski, RM: AUTHOR [+2]

Abstract

A solution which etches gallium arsenide and does not etch gallium aluminum arsenide is described. The etch has no effect on either gallium aluminum arsenide or a gallium aluminum arsenide-oxide layer. The preferred formulation is 1:1:1 NH(4)OH:H(2)O(2):H(2)O. Dilutions of this mix work at slower rates on gallium arsenide.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Selective Etch for Gallium Arsenide

A solution which etches gallium arsenide and does not etch gallium aluminum arsenide is described. The etch has no effect on either gallium aluminum arsenide or a gallium aluminum arsenide-oxide layer. The preferred formulation is 1:1:1 NH(4)OH:H(2)O(2):H(2)O. Dilutions of this mix work at slower rates on gallium arsenide.

An etch with this property is useful in processing various gallium aluminum arsenide-gallium arsenide heterojunction structures, where it is necessary to etch to a certain depth for contacting purposes. Because of the selectivity of this etch, there is no risk of etching beyond the desired depth as there is with timing a nonselective etch.

1