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Repairing Potential Gate Oxide Failure Sites and Development of 100% Defect Free Gate Insulation

IP.com Disclosure Number: IPCOM000078981D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bhattacharyya, A: AUTHOR

Abstract

A silicon substrate coated with a layer of silicon dioxide may be repaired by anodization of the silicon.

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Repairing Potential Gate Oxide Failure Sites and Development of 100% Defect Free Gate Insulation

A silicon substrate coated with a layer of silicon dioxide may be repaired by anodization of the silicon.

Defect sites in silicon dioxide have a higher local conductivity, such that oxygen ion transport can be greatly enhanced at these defect sites. This will result in enhanced oxidation of the sites such that these defects in the silicon- dioxide layer will be repaired. The process for correcting such defects consists of placing an electrolyte consisting of deionized water, containing a few parts per million of ammonium borate, boric acid, or other appropriate electrolyte of high resistivity, being spread on the surface of the silicon wafer and applying a voltage between the electrolyte solution and the silicon substrate. On application of a voltage of approximately 25 to 30 volts, oxygen ions will evolve from the electrolyte and migrate along the high-conductive path in the defect to the silicon and anodize the silicon, and thus repair the defect in the silicon dioxide. With the rate of oxidation at the defect site falling off as the conductivity of the local site decreases, the process is thus self-completing.

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