Browse Prior Art Database

Two Phase Charge Coupled Device Utilizing a Multilayer Insulation with Polarizable Dielectric

IP.com Disclosure Number: IPCOM000078983D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Bhattacharyya, A: AUTHOR [+2]

Abstract

Two-phase charge-coupled shift register devices are well known to the art and require asymmetry in the surface potential distribution.

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Two Phase Charge Coupled Device Utilizing a Multilayer Insulation with Polarizable Dielectric

Two-phase charge-coupled shift register devices are well known to the art and require asymmetry in the surface potential distribution.

The charge-couple device of the figure attains such asymmetry by incorporating on the surface of a silicon body 10, a polarizable dielectric layer of phosphorous doped phosphosilicate glass (PSG) layer 11 sandwiched between a layer of thermal silicon dioxide 12 and pyrolytically deposited silicon dioxide 13. When such layers 11 of PSG are deposited in the form of islands, separated from one another by silicon nitride layers 14 and polysilicon and aluminum, gate lines 15 and 16 are laid down over the silicon nitride layers 14 and the pyrolytic oxide layers 13, respectively, the device can be driven by different phases to introduce into the underlying semiconductor body 10 stepped depletion regions 18 and 19.

Following the above scheme Qss is made negative under gate line 15 relative to Qss under gate line 16 and, therefore, the scheme is applicable to N- type substrates.

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