Browse Prior Art Database

Optoelectric Metal Insulated Semiconductor Transducer

IP.com Disclosure Number: IPCOM000078984D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Franz, JM: AUTHOR [+3]

Abstract

A body of semiconductor material 10 having a layer 11 of insulating material such as silicon nitride disposed over its surface 12 and covered by a transparent gate metal 13, can be utilized as an electrooptical transducer, with an output being taken from the semiconductor body 10.

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Optoelectric Metal Insulated Semiconductor Transducer

A body of semiconductor material 10 having a layer 11 of insulating material such as silicon nitride disposed over its surface 12 and covered by a transparent gate metal 13, can be utilized as an electrooptical transducer, with an output being taken from the semiconductor body 10.

When such a metal nitride silicon transducer is comprised of nondegenerate silicon and biased by battery 14, the current through the transducer, indicated by meter 15, increases as the gate electrode 13 becomes biased more negatively. This is shown by the curve 20 in Fig. 2. At voltage V1, the current does not increase any further with an increase in gate voltage. That is to say, the current saturates with gate voltage. However, if the device is held in saturation by the application of a gate voltage and the interface 12 between the body and the layer 11 is illuminated by light, either through the gate electrode or through the substrate device, the current will suddenly increase to that shown by curve 21, and remain at this significantly higher level for as long a period as the interface is illuminated.

The current increase so obtained, is directly proportional to the intensity of light impinging upon the interface. When the light is removed, the current passing through the device returns to its preilluminated value.

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