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Browse Prior Art Database

Preparatory Cleaning of Silicon Semiconductor Wafers

IP.com Disclosure Number: IPCOM000079031D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Berman, A: AUTHOR [+3]

Abstract

In this process, metal contaminants, particularly copper, are removed from the surface regions of the wafer.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Preparatory Cleaning of Silicon Semiconductor Wafers

In this process, metal contaminants, particularly copper, are removed from the surface regions of the wafer.

Metal contaminants, particularly copper, are frequently introduced to the surface of a semiconductor wafer from polishing techniques, reagents, etc. These metal contaminants significantly reduce the yield, particularly in field-effect transistor devices.

The cleaning cycle for removing surface metal contaminants consists of:
(1) dipping the silicon or semiconductor wafer into an

aqueous HF solution for a time sufficient to remove

the native SiO(2) oxide that inherently forms on

exposure to air;
(2) rinsing the wafer in water;
(3) immediately immersing the water for a few minutes

in a solution which dissolves the metal, e.g.,

HNO, H(2)SO(4), CHl, aqua regia; and
(4) standard cleaning to, in general, clean the wafer.

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