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Browse Prior Art Database

Process for Forming SiO(2)

IP.com Disclosure Number: IPCOM000079032D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Berman, A: AUTHOR

Abstract

In this process an oxide is grown on a silicon wafer without introducing electrical defects in the silicon wafer.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Process for Forming SiO(2)

In this process an oxide is grown on a silicon wafer without introducing electrical defects in the silicon wafer.

In the fabrication of integrated semiconductor devices, the initial oxide on a silicon wafer is ordinarily produced by exposing the heated surface of the wafer to a steam atmosphere. This technique for forming oxide induces electrical defects. These defects can be avoided by growing the oxide in a dry oxygen atmosphere. This technique, however, takes an inordinately long time to produce the desired thickness.

In this method, a thick oxide layer is grown in a reasonably short time without introducing defects. The process consists of exposing the heated silicon wafer to dry oxygen, to form a thermal silicon oxide layer having a thickness on the order of 1000 to 3000 angstroms, followed by exposing the wafer to a steam oxidation to achieve the final desired oxide thickness.

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