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Positive Resist Development Process for Metal Etch

IP.com Disclosure Number: IPCOM000079034D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Arcus, AA: AUTHOR [+2]

Abstract

An acid rinse is employed to short-stop the development of alkali soluble resists.

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This is the abbreviated version, containing approximately 100% of the total text.

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Positive Resist Development Process for Metal Etch

An acid rinse is employed to short-stop the development of alkali soluble resists.

Positive photoresists, such as the novolak resin-diazo ketone sensitizer composition sold as Shipley AZ* 1350H resist, are developed with an alkaline solution. When the development is complete, the resist layer is rinsed with deionized water. The rinse is inefficient in removing all of the alkaline soluble material, some of which may be absorbed on the surface of the resist. The developer solution also may deposit salts on the surface of the metal to be etched. In order to remove residual alkali, deposited salts, and counteract the swelling effect of the developer on the remaining resist, an acid rinse is used. Suitable acids include, for example, formic, acetic and phosphoric.

Following the development of a layer of Shipley AZ1350H resist on a film of Cu-Al on a semiconductor wafer, the wafer was rinsed for one minute in a 0.1 percent aqueous acetic acid with mild agitation. A final rinse with running deionized water to a resistance of 14 megohm was then made. * Trademark of Shipley Company, Inc.

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