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Browse Prior Art Database

Hydrogen Annealing Process for Removing Radiation Damage

IP.com Disclosure Number: IPCOM000079036D
Original Publication Date: 1973-Apr-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Barile, CA: AUTHOR [+2]

Abstract

Bombardment by a beam of ions or electrons introduces radiation damage into semiconductor device structures having composite silicon nitride-silicon oxide dielectrics.

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This is the abbreviated version, containing approximately 100% of the total text.

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Hydrogen Annealing Process for Removing Radiation Damage

Bombardment by a beam of ions or electrons introduces radiation damage into semiconductor device structures having composite silicon nitride-silicon oxide dielectrics.

Such damage is removed by high temperature annealing in a hydrogen atmosphere. The H(2) annealing can be done immediately after the bombardment step, or at the last semiconductor device process step (prior to relatively low-temperature metallization), at a temperature of about 800 degrees C or higher for about one-half hour.

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