Browse Prior Art Database

High Efficiency Ga(1-x)Al(x)As P N Junction Solar Cells

IP.com Disclosure Number: IPCOM000079144D
Original Publication Date: 1973-May-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR [+2]

Abstract

A solar cell structure including a GaAs PN junction with a thin surface layer of Ga(1-x)Al(x)As is described in U.S. Patent 3,675,026 and is illustrated in Fig. 1.

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High Efficiency Ga(1-x)Al(x)As P N Junction Solar Cells

A solar cell structure including a GaAs PN junction with a thin surface layer of Ga(1-x)Al(x)As is described in U.S. Patent 3,675,026 and is illustrated in Fig.
1.

What is proposed is the fabrication of a Ga(1-x)Al(x)As PN junction with a Ga(1-y)Al(y)As thin surface layer. The proposed structure is shown in Fig. 2. The active part of the device is a PN junction in the grown Ga(1-x)Al(x)As layer; the composition value x is made about 0.15, in order to provide a band gap of about 1.6 eV.

The width of this layer can range from 2 to 10 microns. The surface Ga(1-y)Al(y)As layer is added to provide low-series resistance and reduced surface recombination to the Ga(1-x)Al(x)As PN junction. The composition y should be 0.7 or greater and the surface layer thickness 6 microns or less.

Alternatively, the composition x can be increased slightly to provide a PN junction with a band gap of about 1.7 to 1.8 eV.

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