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Process for Deposition of Oxynitride

IP.com Disclosure Number: IPCOM000079219D
Original Publication Date: 1973-May-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ackerman, GK: AUTHOR [+3]

Abstract

Silicon oxynitride is generally deposited by reaction of SiH(4), NH(3) and O(2), in N(2) or H(2) carrier gas. In this process, the establishing and maintaining of the SiH(4)-O(2) ratio is very critical, generally on the order of 10:1. Since the silicon bearing compound flow rate is very small, this implies that the oxygen rate must be one tenth of such rate which presents problems in controlling the desired flow rate.

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Process for Deposition of Oxynitride

Silicon oxynitride is generally deposited by reaction of SiH(4), NH(3) and O(2), in N(2) or H(2) carrier gas. In this process, the establishing and maintaining of the SiH(4)-O(2) ratio is very critical, generally on the order of 10:1. Since the silicon bearing compound flow rate is very small, this implies that the oxygen rate must be one tenth of such rate which presents problems in controlling the desired flow rate.

This process for growing oxynitride, uses SiH(4), NH(3) and CO(2) in H(2) carrier gas. Since the activation energy of the reaction of SiH(4) plus CO(2) to form SiO(2) is significantly greater than the activation energy of the reaction SiH(4) plus O(2) to produce SiO(2), the ratio of SiH(4) to CO(2) can be significantly higher, thus eliminating the need for the critical control of a small reactant flow. The preferred conditions for depositing oxynitride by this process is as follows: a) deposition temperature 850 degrees C-1000 degrees C

b) CO2:NH(3) ratio 0.5:1 to 1.5:1

c) SiH(4):NH(3) ratio >/- 1:12.

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