Browse Prior Art Database

Vertical Barrel Epitaxial Susceptor

IP.com Disclosure Number: IPCOM000079231D
Original Publication Date: 1973-Jun-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Bratter, RL: AUTHOR [+3]

Abstract

This barrel susceptor reduces thickness variations during deposition of an epitaxial layer on a wafer and within wafers in a run, as well as reducing crystallographic slip in the epitaxial layers, by providing more uniform heating of the wafers, and a more streamlined uniform flow of reactive gases over the surface of heated wafers.

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Vertical Barrel Epitaxial Susceptor

This barrel susceptor reduces thickness variations during deposition of an epitaxial layer on a wafer and within wafers in a run, as well as reducing crystallographic slip in the epitaxial layers, by providing more uniform heating of the wafers, and a more streamlined uniform flow of reactive gases over the surface of heated wafers.

In this barrel susceptor the inside and outside walls are parallel, as shown in top view Fig. 1, which results in a uniform thickness of the wall 10. In use, the susceptor is heated by induction. Since the walls have a uniform thickness, there is a relatively uniform current flow resulting in a uniform temperature. A second feature of the susceptor is shown in elevational view Fig. 2, wherein the ratio of the width of a flat susceptor wall surface 10 to the wafer diameter is on the order of 1.5. More explicitly, the width of the wall between the intersection 12 and 14 is approximately 1.5 times the diameter of wafer 16. The wall is thick, having a thickness in the order of one-half inch. A smooth flow of reactant gases over the wafer surface is provided by this feature. A third feature of the susceptor is a lip 18 on the top of the susceptor, which extends from 1/2 to 2 1/2 inches above the top of a wafer 16 seated on wafer supports 20.

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