Browse Prior Art Database

Stripping Photoresist from Aluminum

IP.com Disclosure Number: IPCOM000079265D
Original Publication Date: 1973-Jun-01
Included in the Prior Art Database: 2005-Feb-26
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burrage, PM: AUTHOR

Abstract

This photoresist stripping method allows more efficient removal of exposed photoresist from aluminum conductors, utilized in the manufacture of semiconductor integrated circuit chips.

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Stripping Photoresist from Aluminum

This photoresist stripping method allows more efficient removal of exposed photoresist from aluminum conductors, utilized in the manufacture of semiconductor integrated circuit chips.

Normally, organic solvents are used to strip exposed photoresist after the etching of aluminum metallurgy has been performed, due to the sensitivity of aluminum to more efficient stripping agents. providing a 300 angstrom thick layer of aluminum oxide over aluminum to be etched, enables sulfuric acid based stripping agents to be used efficiently. The oxide layer protects the aluminum from attack, while not materially affecting the overall electrode characteristics of the conductors. External contact to etched aluminum lands through via holes in a protective dielectric coating is achieved, by a reverse sputtering operation prior to deposition of contact materials.

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